THz Diode Technology: Status, Prospects, and Applications
THz Diode Technology: Status, Prospects, and Applications
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DOI：
10.1109/jproc.2017.2650235
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发表时间：
2017-06-01
影响因子：
20.6
通讯作者：
Schlecht, Erich
中科院分区：
文献类型：
--
作者：
Mehdi, Imran;Siles, Jose V.;Schlecht, Erich
在许多太赫兹(THz)和亚毫米波系统中，GaAs肖特基二极管仍然是最有用的太赫兹器件之一。肖特基二极管是一种工作在太赫兹范围内的低寄生器件，可为许多实际应用提供有用的检测和发电。混频器和乘法器的工作频率高达3太赫兹，已经得到了演示。本文综述了二极管技术的现状，详细介绍了制作太赫兹芯片的几种不同方法。概述了太赫兹倍频器和混频器的技术和性能现状，以及这些二极管的应用。
Found in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes continue to be one of the most useful THz devices. As a low-parasitic device that operates well into the THz range, Schottky diodes provide useful detection and power generation for a number of practical applications. Mixers and multipliers, working as high as similar to 3 THz, have already been demonstrated. This paper reviews the current status of diode technology, detailing some of the different ways for fabricating THz chips. An overview regarding the current state of technology and performance for THz frequency multipliers and mixers is presented, along with applications enabled by these diodes.