Focused ion‐beam direct deposition of metal thin film
Focused ion‐beam direct deposition of metal thin film
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聚焦离子束直接沉积金属薄膜
DOI：
10.1063/1.1146945
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发表时间：
1996
影响因子：
1.6
通讯作者：
J. Ishikawa
中科院分区：
文献类型：
--
作者：
S. Nagamachi;Y. Yamakage;M. Ueda;H. Maruno;J. Ishikawa
聚焦离子束直接沉积已经发展为直接在衬底上制造图案化金属膜的新方法。该方法的原理是通过低能量聚焦离子束进行离子束沉积。我们设计并建造了一台用于直接沉积的低能聚焦离子束装置。该系统从液态金属离子源中引出金属离子，单电荷离子加速到20 keV，聚焦，质量分离，偏转，最后减速到30-1000 eV。由沉积线宽估算的束流直径可在0.5 ~ 8 μm之间调节，束流电流在40 pA ~ 10 nA之间变化，对应于Au+离子在30 ~ 200 eV能量范围内的束流直径。测量离子束沉积的粘附概率，并且Au+、Cu+、Al+和Nb 2+的临界能量分别为约210、230、800和1300 eV。通过俄歇电子能谱和二次离子质谱测量金膜的纯度。碳和氧的浓度估计低于100 ppm，与理论预期量一致。沉积的金、铜和铝的线的电阻率被测量为比大块金的大1.5-1.6倍，比大块铜的大1.2-1.5倍，并且比大块铝的大2.2-2.7倍。同时测定了沉积铌线的临界温度，得到了临界温度与杂质浓度之间的关系。
Focused ion‐beam direct deposition has been developed as a new method for fabricating patterned metal films directly on substrates. The principle of this method is to perform ion‐beam deposition by low‐energy focused ion beams. We designed and constructed a low‐energy focused ion‐beam apparatus for direct deposition. Metal ions are extracted from liquid metal ion source, accelerated to 20 keV for single charged ions, focused, mass separated, deflected, and finally, decelerated to 30–1000 eV in this system. The beam diameter estimated by the deposited linewidth can be tuned between 0.5 and 8 μm and the beam current varies from 40 pA to 10 nA corresponding to the beam diameter for the Au+ ion in the energy range from 30 to 200 eV. The sticking probabilities of ion‐beam deposition were measured and the critical energies for Au+, Cu+, Al+, and Nb2+ were about 210, 230, 800, and 1300 eV, respectively. The purity of gold film was measured by Auger electron spectroscopy and secondary‐ion‐mass spectroscopy. The concentration of carbon and oxygen was estimated below 100 ppm and was consistent with theoretically expected amounts. Resistivities of deposited gold, copper, and aluminum line were measured 1.5–1.6 times larger than that of bulk gold, 1.2–1.5 times larger than that of bulk copper, and 2.2–2.7 times larger than that of bulk aluminum. The critical temperature of deposited niobium line was also measured and a clear relationship was obtained between the critical temperature and the concentration of contaminations.