MBE growth of cubic GaN on GaAs substrates
MBE growth of cubic GaN on GaAs substrates
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GaAs 衬底上立方 GaN 的 MBE 生长
DOI：
10.1002/pssb.2221940112
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发表时间：
1996
影响因子：
1.6
通讯作者：
K. Ploog
中科院分区：
文献类型：
--
作者：
Hui Yang;O. Brandt;K. Ploog
本文综述了我们最近在GaAs（001）衬底上用等离子体辅助分子束外延生长立方GaN薄膜的研究结果。反射高能电子衍射和透射电子显微镜突出了获得外延生长的成核阶段的关键作用。对于随后的生长，它被发现，表面化学计量决定的相组成的外延层所确定的X-射线倒易空间映射，拉曼和阴极发光光谱。为了原位控制表面化学计量比，我们开发了一种基于立方（001）GaN表面重构跃迁的方法。通过这种方法优化的条件下生长的薄膜是单相立方，并表现出强烈的激子发光到室温。
We review our recent results on plasma-assisted molecular beam epitaxy of cubic GaN films on GaAs(001). The crucial role of the nucleation stage for obtaining epitaxial growth is highlighted by reflection high-energy electron diffraction and transmission electron microscopy. For the subsequent growth, it is found that the surface stoichiometry determines the phase composition of the epilayers as determined by X-ray reciprocal space mapping, Raman and cathodoluminescence spectroscopy. For an in situ control of the surface stoichiometry, we develop a method based on the transitions of the surface reconstructions of cubic (001)GaN. Films grown under conditions optimized by this method are single-phase cubic and exhibit intense excitonic luminescence up to room temperature.