Ferroelectric Sm-doped BiMnO3 thin films with ferromagnetic transition temperature enhanced to 140 K.
Ferroelectric Sm-doped BiMnO3 thin films with ferromagnetic transition temperature enhanced to 140 K.
复制标题
DOI：
10.1021/am501351c
复制
发表时间：
2014-09-10
影响因子：
9.5
通讯作者：
MacManus-Driscoll, Judith L.
中科院分区：
文献类型：
--
作者：
Choi, Eun-Mi;Kursumovic, Ahmed;Lee, Oon Jew;Kleibeuker, Josee E.;Chen, Aiping;Zhang, Wenrui;Wang, Haiyan;MacManus-Driscoll, Judith L.
采用化学压力和衬底双轴压力相结合的晶体工程方法在SrTiO 3单晶衬底上制备了高外延Sm掺杂BiMnO 3（BSMO）薄膜，其磁转变温度（TC）高达140 K，比标准BiMnO 3（BMO）薄膜高40 K。强室温铁电性与piezoresponse振幅，d33 = 10 pm/V，和长期保留的极化也被观察到。此外，BSMO薄膜比纯BMO薄膜更容易生长，在较宽的生长窗口内具有优异的相纯度。这项工作代表了一种非常有效的方法来独立控制平面内和平面外的应变，这不仅对BMO很重要，而且对控制许多其他强相关氧化物的性质也很重要。
A combined chemical pressure and substrate biaxial pressure crystal engineering approach was demonstrated for producing highly epitaxial Sm-doped BiMnO3 (BSMO) films on SrTiO3 single crystal substrates, with enhanced magnetic transition temperatures, TC up to as high as 140 K, 40 K higher than that for standard BiMnO3 (BMO) films. Strong room temperature ferroelectricity with piezoresponse amplitude, d33 = 10 pm/V, and long-term retention of polarization were also observed. Furthermore, the BSMO films were much easier to grow than pure BMO films, with excellent phase purity over a wide growth window. The work represents a very effective way to independently control strain in-plane and out-of-plane, which is important not just for BMO but for controlling the properties of many other strongly correlated oxides.
登录
查看更多内容
影响因子：
3.3
作者：
Atou, T;Chiba, H;Syono, Y
通讯作者：
Syono, Y
影响因子：
3.7
作者：
Gajek, M;Bibes, M;Fert, A
通讯作者：
Fert, A
影响因子：
4
作者：
De Luca, G. M.;Preziosi, D.;Salluzzo, M.
通讯作者：
Salluzzo, M.
影响因子：
3.3
作者：
JIA, YQ
通讯作者：
JIA, YQ
影响因子：
19
作者：
Kan, Daisuke;Palova, Lucia;Takeuchi, Ichiro
通讯作者：
Takeuchi, Ichiro