Critical charge characterization in 6-T SRAMs during read mode
Critical charge characterization in 6-T SRAMs during read mode
复制标题
读取模式期间 6-T SRAM 的关键电荷特性
DOI：
10.1109/iolts.2009.5195993
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
B. Alorda
中科院分区：
文献类型：
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作者：
S. Bota;G. Torrens;B. Alorda
在这项工作中，我们分析了辐射引起的瞬态脉冲对6 T SRAM单元工作在读取模式的影响。在读取模式期间存储器单元的临界电荷低于在保持模式中。对于1到0的翻转，对于α粒子产生的事件，这种减少达到因子x1.5;对于较长的感应电流脉冲，该因子甚至更高。还分析了通过位线传播的事件的影响。结果表明，在读出过程中，读出放大器中可能发生翻转而产生错误的输出，而不改变存储单元的存储值。
In this work we analyze the effects of radiation-induced transient pulses on 6T SRAM cells operating in read mode. The critical charge of a memory cell during read mode is lower than in hold mode. For 1 to 0 upsets, this reduction reaches a factor x1.5 for events produced by alpha particles; this factor is even higher for longer induced current pulses. The impact of events propagated through the bit-lines is also analyzed. Results show that it is possible the occurrence of an upset in the Sense Amplifier producing a wrong output in the readout process without changing the memory cell stored value.