Understanding the vapor–liquid–solid mechanism of Si nanowire growth and doping to synthetically encode precise nanoscale morphology
Understanding the vapor–liquid–solid mechanism of Si nanowire growth and doping to synthetically encode precise nanoscale morphology
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了解硅纳米线生长和掺杂的气-液-固机制，以综合编码精确的纳米级形态
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发表时间：
2016
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通讯作者：
J. Cahoon
中科院分区：
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作者：
Christopher W. Pinion;Joseph D. Christesen;J. Cahoon
自下而上控制半导体纳米结构形态的化学方法是对目前主导半导体工业的自上而下制造技术的一种有前途的补充。在自下而上的技术中，采用气-液-固(VLS)机制生长纳米线受到了极大的关注。在这篇重点文章中，我们回顾了我们在理解支配VLS NW生长、掺杂和掺杂调制的微观过程方面的最新进展。定量测量了一系列合成条件下的Si NW生长速率和P掺杂分布，并用包括掺入、蒸发和结晶的微观反应的VLS生长动力学分析对其进行了解释。该分析使我们能够确定能够产生与直径无关的生长速率和与直径无关的突然掺杂剂转变的合成条件。优化的条件允许沿着Si NW的生长轴对精确的、亚10 nm的形貌进行编码，从而实现了通常通过高分辨率、自上而下的光刻制造的复杂结构的自下而上的化学纳米制造。
Bottom-up, chemical methods to control the morphology of semiconductor nanostructures are a promising complement to the top-down fabrication techniques that currently dominate the semiconductor industry. Among bottom-up techniques, nanowire (NW) growth using the vapor–liquid–solid (VLS) mechanism has received great attention. In this Highlight article, we review our recent progress toward understanding the microscopic processes that govern VLS NW growth, doping, and dopant modulation. Quantitative measurements of Si NW growth rates and P dopant profiles under a range of synthetic conditions are interpreted with a kinetic analysis of VLS growth that includes the microscopic reactions of incorporation, evaporation, and crystallization. The analysis allows us to identify synthetic conditions that yield both diameter-independent growth rates and abrupt, diameter-independent dopant transitions. The optimized conditions allow precise, sub-10 nm morphology to be encoded along the growth axis of Si NWs, enabling the bottom-up chemical nanofabrication of complex structures that are typically fabricated by high-resolution, top-down lithography.