Linear forms in the logarithms of algebraic numbers I - IV Mathematika 13

Linear forms in the logarithms of algebraic numbers I - IV Mathematika 13
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代数数对数的线性形式 I - IV Mathematika 13

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发表时间:
1967
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通讯作者:
A. Baker
A. Baker
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作者:
A. Baker

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一种磁畴存储器件,包括铁磁多晶金属层,该金属层被施加到支撑件上并包括不同矫顽力的区域,带状沟道形式的较低矫顽力区域被较高矫顽力区域包围;电导体系统,在平行于铁磁层并紧邻铁磁层布置的平面中延伸,传播和检测较低矫顽力的通道中的磁畴;以及具有电连接的基板。较低折射率的区域遵循类似于螺旋的路径,其一端邻近支撑件的中心,另一端邻近支撑件的拐角,并且在两端之间执行至少一个完整的360 °转弯。这种类型的域存储设备的特征在于更高的存储容量。
A magnetic domain storage device comprising a ferromagnetic, polycrystalline metal layer which is applied to a support and comprises areas of different coercivity, the areas of lower coercivity in the form of strip-shaped channels being surrounded by areas of higher coercivity; a system of electrical conductors, extending in planes arranged parallel and in close vicinity to the ferromagnetic layer for creating, propagating and detecting magnetic domains in the channels of lower coercivity; and a baseplate with electrical connections. The areas of lower coercivity follow a path similar to a spiral with its one end adjacent to the center of the support and the other end adjacent to a corner of the support and executing at least one full 360 DEG turn between both ends. The domain storage devices of this type are distinguished by a higher storage capacity.