CdZnTe position-sensitive drift detectors with thicknesses up to 5 cm
CdZnTe position-sensitive drift detectors with thicknesses up to 5 cm
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DOI：
10.1063/1.4943161
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发表时间：
2016-02-29
影响因子：
4
通讯作者：
James, R. B.
中科院分区：
文献类型：
--
作者：
Bolotnikov, A. E.;Camarda, G. S.;James, R. B.
我们研究了长漂移时间CdZnTe（CZT）γ射线探测器的可行性，由Redlen Technologies生产的CZT材料制成。CZT晶体的横截面积为5 x 5 mm（2）和6 x 6 mm（2），厚度为20 mm、30 mm、40 mm和50 mm，被配置为3D位置敏感漂移探测器，并使用前端ASIC读出。通过校正晶体中的缺陷引起的电子电荷损失，我们证明了相对较厚的探测器的高性能，由CZT材料制成。(C)2016 AIP Publishing LLC.
We investigated the feasibility of long-drift-time CdZnTe (CZT) gamma-ray detectors, fabricated from CZT material produced by Redlen Technologies. CZT crystals with cross-section areas of 5 x 5 mm(2) and 6 x 6 mm(2) and thicknesses of 20-, 30-, 40-, and 50-mm were configured as 3D position-sensitive drift detectors and were read out using a front-end ASIC. By correcting the electron charge losses caused by defects in the crystals, we demonstrated high performance for relatively thick detectors fabricated from unselected CZT material. (C) 2016 AIP Publishing LLC.