Correlation between bias stress instability and phototransistor operation of pentacene thin-film transistors
Correlation between bias stress instability and phototransistor operation of pentacene thin-film transistors
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DOI：
10.1063/1.2777177
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发表时间：
2007-09
影响因子：
4
通讯作者：
M. Debucquoy;S. Verlaak;S. Steudel;K. Myny;Jan Genoe;P. Heremans
中科院分区：
文献类型：
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作者：
M. Debucquoy;S. Verlaak;S. Steudel;K. Myny;Jan Genoe;P. Heremans
作者研究了并五苯薄膜晶体管作为光电晶体管的应用。导通电压(Von)的漂移是导致这些器件具有高光敏性的原因，它强烈地依赖于照明时间和施加的栅极电压。这一过程的时间依赖性类似于在黑暗中偏压实验中的Von漂移，光照可以简单地解释为偏压应力不稳定性的加速因素。通过比较不同栅介电常数器件的特性，指出电子在栅介质界面处被OH基团俘获是引起这些漂移的主要原因。
The authors study the use of pentacene thin-film transistors as phototransistors. The shift in turn-on voltage (Von), responsible for the high photosensitivity of these devices, is shown to be strongly dependent on illumination time and applied gate voltage. The time dependence of this process is similar to the shift in Von during bias stress experiments in the dark, and illumination can simply be accounted for as an acceleration factor for bias stress instability. By comparing the characteristics of devices with different gate dielectrics, trapping of electrons by OH groups at the gate dielectric interface is indicated as a main origin for these shifts.