Kondo memory in driven strongly correlated quantum dots.
Kondo memory in driven strongly correlated quantum dots.
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DOI：
10.1103/physrevlett.111.086601
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发表时间：
2013-04
影响因子：
8.6
通讯作者：
Xiao Zheng;Yijing Yan;M. Di Ventra
中科院分区：
文献类型：
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作者：
Xiao Zheng;Yijing Yan;M. Di Ventra
我们研究了强关联量子点系统在正弦驱动电压下的实时电流响应。通过一个精确的分层运动方程的方法，我们证明了存在显着的记忆效应引起的近藤共振的实时电流响应。这些记忆效应在动态电流-电压特性中表现为独特的磁滞线形状和自交叉特征，并伴随着奇数泛音的激发。它们作为量子相干性（由于感应行为）和电子相关性（由于近藤共振）的合作效应而出现。我们还显示了抑制的记忆效应和过渡到经典的行为作为温度的函数。所有这些现象都可以在实验中观察到，并可能导致新的量子存储器应用。
We investigate the real-time current response of strongly correlated quantum dot systems under sinusoidal driving voltages. By means of an accurate hierarchical equations of motion approach, we demonstrate the presence of prominent memory effects induced by the Kondo resonance on the real-time current response. These memory effects appear as distinctive hysteresis line shapes and self-crossing features in the dynamic current-voltage characteristics, with concomitant excitation of odd-number overtones. They emerge as a cooperative effect of quantum coherence-due to inductive behavior-and electron correlations-due to the Kondo resonance. We also show the suppression of memory effects and the transition to classical behavior as a function of temperature. All these phenomena can be observed in experiments and may lead to novel quantum memory applications.