Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization. I. Fundamentals and theory
Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization. I. Fundamentals and theory
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DOI：
10.1109/63.728348
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发表时间：
1998-11
影响因子：
6.7
通讯作者：
P. Bagnoli;C. Casarosa;M. Ciampi;E. Dallago
中科院分区：
文献类型：
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作者：
P. Bagnoli;C. Casarosa;M. Ciampi;E. Dallago
本文对电子器件及其封装的热动力学进行了细致的理论分析，以研究等效热路的实现问题。结果发现，器件温度随时间的演化是由一个无限的和收敛的时间常数系列。从温度瞬态测量获得的时间常数谱的前n项的知识允许完整表征结构为具有n个单元的考尔低通网络的合适且可靠的等效热回路。因此，总热阻被评估为由于整个系统的给定部分而产生的若干贡献的总和。允许这些贡献的物理标识的技术也进行了讨论。此外，考虑了塑料覆盖对器件热行为的影响。所提出的表征方法也适用于一维（1-D）多层模拟结构，以研究用于分析和局部缺陷或修改的材料热性能的影响的时间常数的数量的影响。
In this paper, a careful theoretical analysis of the thermal dynamics of an electronic device and its package was carried out in order to study the problem of the equivalent thermal circuit implementation. It was found that the device temperature evolution in time is ruled by an infinite and convergent series of time constants. The knowledge of the first n terms of the time-constant spectrum obtained from the temperature transient measurements allows the complete characterization of a suitable and reliable equivalent thermal circuit structured as a Cauer low-pass network with n cells. The total thermal resistance is therefore evaluated as a sum of several contributions due to given parts of the whole system. The techniques allowing the physical identifications of these contributions are also discussed. Furthermore, the influence of plastic coverage on the device thermal behavior is taken into account. The proposed characterization method is also applied to one-dimensional (1-D) multilayered simulated structures in order to study the influence of the number of time constants used for the analysis and effects of local defects or modifications of the material thermal properties.