Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes
Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes
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DOI：
10.1103/physrevlett.110.087404
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发表时间：
2013-02-21
影响因子：
8.6
通讯作者：
Reshchikov, M. A.
中科院分区：
文献类型：
--
作者：
Demchenko, D. O.;Diallo, I. C.;Reshchikov, M. A.
我们证明了在碳掺杂和纯GaN中经常观察到的黄色发光是通过C-N-O-N络合物的电子跃迁的结果。与常见的孤立缺陷相比，C-N-O-N络合物在能量上是有利的，它的吸收和发射能、零声子线和热力学跃迁能级等光学性质的计算结果都与测量的发光数据符合得很好。因此，通过结合混合密度泛函理论和实验测量，我们提出了一个长期存在的GaN黄色发光问题的解决方案。DOI：10.1103/PhysRevLett.110.087404
We demonstrate that yellow luminescence often observed in both carbon-doped and pristine GaN is the result of electronic transitions via the C-N-O-N complex. In contrast to common isolated defects, the C-N-O-N complex is energetically favorable, and its calculated optical properties, such as absorption and emission energies, a zero phonon line, and the thermodynamic transition level, all show excellent agreement with measured luminescence data. Thus, by combining hybrid density functional theory and experimental measurements, we propose a solution to a long-standing problem of the GaN yellow luminescence. DOI: 10.1103/PhysRevLett.110.087404