Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents.
Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents.
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DOI：
10.1038/srep14647
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发表时间：
2015-09-30
影响因子：
4.6
通讯作者：
Tulapurkar A
中科院分区：
文献类型：
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作者：
Sharma S;Muralidharan B;Tulapurkar A
我们提出了一种新的机制和相关的器件概念，用于鲁棒，磁场可调谐射频振荡器（rf），利用磁畴壁在均匀静态磁场和空间非均匀垂直直流自旋电流下的自振荡。畴壁的自振荡是由于它在两个不稳定位置之间周期性地转换而产生的，一个是在直流自旋电流和磁场都存在的区域，另一个是在只有磁场存在的地方。垂直的直流自旋电流把它从一个不稳定的位置推开，而磁场把它从另一个位置推开。我们证明这种振荡在噪声下是稳定的，并且可以表现出超过1000的质量因子。动态转换下的畴壁不仅是丰富物理学的来源，也是纳米电子学进步的一个有希望的候选对象，积极研究的赛道存储器结构，数字和模拟开关范式是候选例子。因此，利用畴壁设计稳定的射频振荡器是实现全畴壁逻辑方案的又一步。
We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.