MACl‐Assisted Ge Doping of Pb‐Hybrid Perovskite: A Universal Route to Stabilize High Performance Perovskite Solar Cells
MACl‐Assisted Ge Doping of Pb‐Hybrid Perovskite: A Universal Route to Stabilize High Performance Perovskite Solar Cells
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DOI：
10.1002/aenm.201903299
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发表时间：
2020-01
影响因子：
27.8
通讯作者：
Gyu Min Kim;A. Ishii;S. Öz;T. Miyasaka
中科院分区：
文献类型：
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作者：
Gyu Min Kim;A. Ishii;S. Öz;T. Miyasaka
有机-无机混合钙钛矿太阳能电池（HyPSC）中的界面工程、晶界和表面钝化在实现高性能和增强的耐久性方面是有效的。有机添加剂和无机掺杂通常用于化学改性接触电荷传输层的表面和/或晶界，以降低缺陷密度。在这里，首次报道了用Ge掺杂有机-无机混合钙钛矿的简单但棘手的一步法。与Ge掺杂到全无机钙钛矿不同，GeI 2在有机-无机钙钛矿前体中的应用具有挑战性，这是由于GeI 2在混合钙钛矿油墨中的溶解度极差，导致无法形成均匀的膜。然而，它被发现，加入甲基氯化铵（MACl）到前体显着增加GeI 2的溶解度。混合钙钛矿的这种MACl辅助Ge掺杂产生高质量的结晶膜，其表面用非挥发性GeI 2（GeO 2）钝化，并且挥发性MACl添加剂还改善了钙钛矿膜中GeO 2分布的均匀性。所得到的具有组成FA0.83MA0.17Ge0.03Pb0.97（I0.9Br0.1）3的Ge掺杂的混合阳离子和混合卤化物钙钛矿膜显示出上级的光致发光寿命、高于22%的功率转换效率以及对光照和湿度的更大稳定性，优于没有Ge掺杂制备的HyPSC的光伏特性。
Interfacial engineering, grain boundary, and surface passivation in organic–inorganic hybrid perovskite solar cells (HyPSCs) are effective in achieving high performance and enhanced durability. Organic additives and inorganic doping are generally used to chemically modify the surface contacting charge transport layers, and/or grain boundaries so as to reduce the defect density. Here, a simple but tricky one‐step method to dope organic–inorganic hybrid perovskite with Ge for the first time is reported. Unlike Ge doping to all‐inorganic perovskites, application of GeI2 in organic–inorganic perovskite precursors is challenging due to the extremely poor solubility of GeI2 in hybrid perovskite ink, leading to failure in the formation of uniform films. However, it is found that addition of methylammonium chloride (MACl) into the precursor remarkably increases the solubility of GeI2. This MACl‐assisted Ge doping of hybrid perovskites produces high‐quality crystalline film with its surface passivated with nonvolatile GeI2 (GeO2) and the volatile MACl additive also improves the uniformity of GeO2 distribution in the perovskite films. The resulting Ge‐doped mixed cation and mixed halide perovskite films with composition FA0.83MA0.17Ge0.03Pb0.97(I0.9Br0.1)3 show superior photoluminescence lifetime, power conversion efficiency above 22%, and greater stability toward illumination and humidity, outperforming photovoltaic properties of HyPSCs prepared without the Ge doping.