Dynamic range of ultrabroadband terahertz detection using GaAs photoconductors
Dynamic range of ultrabroadband terahertz detection using GaAs photoconductors
复制标题
使用砷化镓光电导体进行超宽带太赫兹检测的动态范围
DOI：
10.1063/1.2193427
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发表时间：
2006
影响因子：
4
通讯作者：
S. R. Andrews
中科院分区：
文献类型：
--
作者：
A. Hussain;S. R. Andrews
通过在注入 As 的 GaAs 中光学激发的电子空穴等离子体中感应的极化电流，可以相干地检测具有跨越远红外和中红外频率分量的电磁瞬变。脉冲响应由光载流子迁移率和密度的频率依赖性以及晶格对介电常数的贡献控制。与使用薄 ZnTe 晶体的电光采样相比，光电导检测可以产生相当或更大的动态范围，高达 40THz。
Electromagnetic transients with frequency components spanning the far and midinfrared are coherently detected by means of the polarization current induced in an electron-hole plasma optically excited in As implanted GaAs. The impulse response is governed by the frequency dependence of the photocarrier mobility and density and the lattice contribution to the dielectric constant. Compared with electro-optic sampling using thin ZnTe crystals, photoconductive detection can yield a comparable or greater dynamic range up to 40THz.