Analysis of electron multiplying charge coupled device and scientific CMOS readout noise models for Shack-Hartmann wavefront sensor accuracy
Analysis of electron multiplying charge coupled device and scientific CMOS readout noise models for Shack-Hartmann wavefront sensor accuracy
复制标题
针对 Shack-Hartmann 波前传感器精度的电子倍增电荷耦合器件和科学 CMOS 读出噪声模型的分析
DOI：
10.1117/1.jatis.1.3.039002
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Basden A
中科院分区：
文献类型：
--
作者：
Basden A
近年来，亚电子读出噪声探测器在天文自适应光学系统中得到了很好的应用。在这里，我们比较了两种常用的关键微弱磁通电平探测器技术的读出噪声模型：电子倍增电荷耦合器件(EMCCD)和科学CMOS(SCMOS)探测器。我们发现，在几乎所有的情况下，EMCCD技术都是有利的，并且常用的EMCCD读出的简化模型是合适的。我们还发现，常用的简单的sCMOS读出噪声模型是乐观的，我们建议在仪器性能建模和开发过程中考虑对sCMOS均方根读出噪声概率分布的适当处理。
In recent years, detectors with subelectron readout noise have been used very effectively in astronomical adaptive optics systems. Here, we compare readout noise models for the two key faint flux level detector technologies that are commonly used: electron multiplying charge coupled device (EMCCD) and scientific CMOS (sCMOS) detectors. We find that in almost all situations, EMCCD technology is advantageous, and that the commonly used simplified model for EMCCD readout is appropriate. We also find that the commonly used simple models for sCMOS readout noise are optimistic, and we recommend that a proper treatment of the sCMOS root mean square readout noise probability distribution should be considered during instrument performance modeling and development.