Undoped amorphous SiNx: H alloy semiconductors: Dependence of electronic properties on composition
Undoped amorphous SiNx: H alloy semiconductors: Dependence of electronic properties on composition
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DOI：
10.1016/0022-3093(84)90121-2
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发表时间：
1984-12
影响因子：
3.5
通讯作者：
T. V. Herak;R. McLeod;K. Kao;H. Card;H. Watanabe;K. Katoh;M. Yasui;Y. Shibata
中科院分区：
文献类型：
--
作者：
T. V. Herak;R. McLeod;K. Kao;H. Card;H. Watanabe;K. Katoh;M. Yasui;Y. Shibata
测量了在SiH_4、_2、_2中射频生长放电制备的a-SiN_x：H薄膜在0<；x⪅_(0.6)范围内的电学和光学性质。结果表明，N含量对⪅_(0.4)的扩展态电子电导激活能和光学带隙没有影响。N掺杂使电子迁移率在扩展态提高了10倍之多。当≈高于0.4时，四面体网络向Si3N4网络的转变很快。
The electrical and optical properties of a-SiNx:H thin films prepared by rf growth-discharge in SiH4N2H2without B or P doping have been measured for 0 <x⪅ 0.6. It is observed that the activation energy for extended-state electron conduction as well as the optical gap are unaffected by N content forx⪅ 0.4. The electron mobility in extended states is improved by as much as a factor of 10 by the N incorporation. There is a rapid conversion from the tetrahedral network to a Si3N4network asxincreases above ≈ 0.4.