Highly Selective Chemical Vapor Deposition of Tin Diselenide Thin Films onto Patterned Substrates via Single Source Diselenoether Precursors
Highly Selective Chemical Vapor Deposition of Tin Diselenide Thin Films onto Patterned Substrates via Single Source Diselenoether Precursors
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DOI：
10.1021/cm302864x
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发表时间：
2012-11-27
影响因子：
8.6
通讯作者：
Reid, Gillian
中科院分区：
文献类型：
--
作者：
de Groot, C. H. (Kees);Gurnani, Chitra;Reid, Gillian
畸变八面体配合物[SnCl_4 {（BuSe）-Bu-n（CH_2）（n）（SeBu）-Bu-n}]（n = 2或3），（1）和（2），由SnCl 4与中性双齿配体反应得到，通过IR/拉曼和多核（H-1，Se-77{H-1}和Sn-119）NMR光谱和X射线晶体学，用作在SiO2、Si和TiN衬底上低压化学气相沉积（LPCVD）微晶、单相二硒化锡膜的非常有效的单源前体。扫描电子显微镜（SEM）和原子力显微镜（AFM）成像显示六方板微晶，其在较厚的膜中垂直于衬底表面生长，但当试剂的量减少以限制膜厚度时，其大部分平行于表面排列。沉积膜上的X射线衍射（XRD）和拉曼光谱与六方SnSe 2（P（3）在棒m1上; a = B = 3.81埃; c = 6.13埃）一致，具有较薄（0.5-2 μ m）样品中微晶优选取向的强有力证据，与平行于衬底表面的晶体板生长一致。霍尔测量表明，沉积的SnSe 2是一个n型半导体。晶体膜的电阻率为210（+/- 10）m Ω cm，载流子密度为5.0 × 10（18）cm（-3）。观察到从这些试剂到光刻图案化衬底上的非常高选择性的膜生长，其中强烈优选沉积到SiO2/TiN图案化衬底的（导电）TiN表面上，以及Si/SiO2图案化衬底的SiO2表面上。观察到高选择性和基板表面上的水滴的高接触角之间的相关性。
The distorted octahedral complexes [SnCl4{(BuSe)-Bu-n(CH2)(n)(SeBu)-Bu-n}] (n = 2 or 3), (1) and (2), obtained from reaction of SnCl4 with the neutral bidentate ligands and characterized by IR/Raman and multinuclear (H-1, Se-77{H-1} and Sn-119) NMR spectroscopy and X-ray crystallography, serve as very effective single source precursors for low pressure chemical vapor deposition (LPCVD) of microcrystalline, single phase tin diselenide films onto SiO2, Si and TiN substrates. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) imaging show hexagonal plate crystallites which grow perpendicular to the substrate surface in the thicker films, but align mostly parallel to the surface when the quantity of reagent is reduced to limit the film thickness. X-ray diffraction (XRD) and Raman spectroscopy on the deposited films are consistent with hexagonal SnSe2 (P (3) over bar m1; a = b = 3.81 angstrom; c = 6.13 angstrom), with strong evidence for preferred orientation of the crystallites in thinner (0.5-2 mu m) samples, consistent with crystal plate growth parallel to the substrate surface. Hall measurements show the deposited SnSe2 is a n-type semiconductor. The resistivity of the crystalline films is 210 (+/- 10) m Omega cm and carrier density is 5.0 x 10(18) cm(-3). Very highly selective film growth from these reagents onto photolithographically patterned substrates is observed, with deposition strongly preferred onto the (conducting) TiN surfaces of SiO2/TiN patterned substrates, and onto the SiO2 surfaces of Si/SiO2 patterned substrates. A correlation between the high selectivity and high contact angle of a water droplet on the substrate surfaces is observed.