Materials for bulk acoustic wave (BAW) resonators and filters
Materials for bulk acoustic wave (BAW) resonators and filters
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DOI：
10.1016/s0955-2219(01)00329-6
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发表时间：
2001-01-01
影响因子：
5.7
通讯作者：
Lok, P
中科院分区：
文献类型：
--
作者：
Löbl, HP;Klee, M;Lok, P
薄膜体声波（BAW）谐振器和滤波器适用于在1-10 GHz之间的高频下操作的移动的通信系统。谐振频率主要由压电层的厚度决定。因此，用于该应用的压电膜的厚度为几个100 nm（高达约100 nm）。2 μ m），取决于频率。用于体声波器件的压电薄膜材料包括用于小带宽应用的AlN、ZnO薄膜以及用于宽带宽应用的PZT薄膜。在飞利浦压电AlN和PbZrxTi 1-xO 3（PZT）层的研究与RIF微电子应用的潜力。通过优化溅射沉积条件和施加合适的成核层，可以获得具有强c轴取向的高质量AlN薄膜。机电耦合系数k为0.25 +/- 0.03，这是接近大量的数据，已被发现在高度c轴取向的AlN薄膜。溅射沉积条件之间的关系。一方面，AlN薄膜的结构和机电耦合系数k和相关的电气参数的另一方面将进行讨论。采用一维物理模型精确描述了体声波谐振器的电阻抗数据。通过溶胶-凝胶工艺生长PZT薄膜。这些膜显示出0.3-0.6的高机电耦合因子k，因此对于宽带宽滤波器应用是有吸引力的。(C)，2001爱思唯尔科技有限公司版权所有。
Thin film bulk acoustic wave (BAW) resonators and filters are appropriate for mobile communication systems operating at high frequencies between 1-10 GHz. The resonance frequency is mainly determined by the thickness of the piezoelectric layer. Piezoelectric films used for this application are, therefore, several 100 nm in thickness (up to approx. 2 mum) depending on frequency. Piezoelectric thin film materials used for bulk acoustic wave devices include AlN, ZnO thin films for small bandwidth applications and also PZT films for wide bandwidth applications. Within Philips piezoelectric AlN and PbZrxTi1-xO3 (PZT) layers are investigated with respect to their potential for RIF micro-electronic applications. High quality AIN films with strong c-axis orientation are achieved by optimum sputter deposition conditions and by applying suited nucleation layers. Electromechanical coupling factors k of 0.25 +/- 0.03, which are close to the bulk data, have been found in highly c-axis oriented AlN thin films. The relationship between sputter deposition conditions. AlN films structure on the one hand and electromechanical coupling factor k and relevant electrical parameters on the other hand will be discussed. A one-dimensional physical model is used to describe the bulk acoustic wave resonator's electrical impedance data accurately. Thin PZT films are grown via sol-gel processing. These films show high electromechanical coupling factor k of 0.3-0.6 and are therefore attractive for wide bandwidth filter applications. (C), 2001 Elsevier Science Ltd. All rights reserved.