X-ray photoelectron spectroscopic and secondary ion mass spectroscopic examinations of metallic-lithium-activated donor doping process on La0.56Li0.33TiO3 surface at room temperature
X-ray photoelectron spectroscopic and secondary ion mass spectroscopic examinations of metallic-lithium-activated donor doping process on La0.56Li0.33TiO3 surface at room temperature
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DOI：
10.1063/1.2337787
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发表时间：
2006-09
影响因子：
3.2
通讯作者：
Kai-Yun Yang;K. Fung;Moo-Chin Wang
中科院分区：
文献类型：
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作者：
Kai-Yun Yang;K. Fung;Moo-Chin Wang
利用X射线光电子能谱（XPS）和二次离子质谱（西姆斯）研究了La0.56Li0.33TiO3/Li界面的施主掺杂过程。XPS分析表明，由于12%的Ti ~（4+）转化为Ti ~（3+），使Ti ~（4+）2p_3Scin_2的主峰向低能侧发生了化学位移（~ 1.48eV）。西姆斯分析表明，局部电场是负责氧化的Li+6同位素离子的插入。与Ti 3+施主的掺杂，伴随着Li+离子插入到阳离子空位的La 0.56Li 0.33TiO 3，在室温下产生的n型半导体特性。
The donor doping process at the interface between the cation-deficient La0.56Li0.33TiO3 and lithium was elucidated by x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). XPS revealed a chemical shift (∼1.48eV) from the main peak of Ti4+ 2p3∕2 toward the low energy side, due to the conversion of 12% Ti4+ to Ti3+. The SIMS analysis indicates that a local electric field was responsible for the insertion of oxidized Li+6 isotope ions. The doping with Ti3+ donors, accompanying the insertion of Li+ ions into cation vacancies of La0.56Li0.33TiO3, yields the n-type semiconducting characteristics at room temperature.