Highly Stable and Tunable n-Type Graphene Field-Effect Transistors with Poly(vinyl alcohol) Films
Highly Stable and Tunable n-Type Graphene Field-Effect Transistors with Poly(vinyl alcohol) Films
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DOI：
10.1021/acsami.5b01474
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发表时间：
2015-05-13
影响因子：
9.5
通讯作者：
Maruyama, Shigeo
中科院分区：
文献类型：
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作者：
Kim, Sungjin;Zhao, Pei;Maruyama, Shigeo
石墨烯场效应晶体管 (FET) 在环境条件下的固有 p 型行为对复杂电子器件（例如集成电路）的组装提出了根本性挑战。在这项工作中，我们提出了一种通过聚乙烯醇 (PVA) 涂层对石墨烯 FET 进行可调 n 型掺杂的协议。使用通过醇催化化学气相沉积生长的石墨烯，通过这种富含羟基阴离子的聚合物对表面进行功能化，即使在环境空气条件下，也会导致 FET 从 p 型演变为双极性或 n 型。石墨烯的掺杂水平与PVA薄膜涂层参数如溶液浓度、硬化温度和硬化时间密切相关。这种PVA涂层被证明是一种简单而稳定的调节石墨烯狄拉克点和掺杂水平的方法，这对石墨烯基电子器件的未来非常理想且具有重要意义。
The intrinsic p-type behavior of graphene field-effect transistors (FETs) under ambient conditions poses a fundamental challenge for the assembly of complex electronic devices, such as integrated circuits. In this work, we present a protocol for tunable n-type doping of graphene FETs via poly(vinyl alcohol) (PVA) coating. Using graphene grown by alcohol catalytic chemical vapor deposition, functionalization of the surface by this hydroxyl anion-rich polymer results in an evolution of the FETs from p-type to ambipolar or n-type even under ambient air conditions. The doping level of graphene is strongly related to the PVA film coating parameters, such as solution concentration, hardening temperature, and hardening time. This PVA coating proves to be a simple and stable approach to tuning the Dirac point and doping level of graphene, which is highly desirable and of great significance for the future of graphene-based electronic devices.