Synchronous Growth of High-Quality Bilayer Bernal Graphene: From Hexagonal Single-Crystal Domains to Wafer-Scale Homogeneous Films
Synchronous Growth of High-Quality Bilayer Bernal Graphene: From Hexagonal Single-Crystal Domains to Wafer-Scale Homogeneous Films
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高质量双层伯纳尔石墨烯的同步生长：从六方单晶域到晶圆级均质薄膜
DOI：
10.1002/adfm.201605927
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发表时间：
2017
影响因子：
19
通讯作者：
Wan Jianguo
中科院分区：
文献类型：
--
作者：
Wu Jun;Wang Junyong;Pan Danfeng;Li Yongchao;Jiang Chenghuan;Li Yingbin;Jin Chen;Wang Kang;Song Fengqi;Wang Guanghou;Zhang Hao;Wan Jianguo
由于石墨烯在纳米电子学应用中的巨大潜力，对石墨烯的畴结构、层厚度和堆叠顺序的精确控制引起了人们的极大兴趣。半导体Bernal（AB）堆叠的双层石墨烯由于其可调能带结构和单层石墨烯不可用的电子性质而被投入了大量的努力。然而，在铜上快速生长具有高AB堆叠比和高迁移率的大规模双层石墨烯片带来了巨大的挑战，必须克服自限效应。这项研究报告了一种低成本但简便的方法，以聚苯乙烯为原料，通过常压化学气相沉积快速合成双层Bernal石墨烯。获得的双层石墨烯颗粒和连续膜具有高质量，并且在室温下分别表现出高达5700和2200 cm 2 V-1 s-1的场效应空穴迁移率。此外，通过监测生长过程揭示了双层石墨烯的同步生长机制，导致接近100%的高表面覆盖率，接近完美的AB-堆叠顺序。这一新的合成路线对双层石墨烯的工业应用和研究石墨烯的化学气相沉积生长机理具有重要意义。
The precise control of the domain structure, layer thickness, and stacking order of graphene has attracted intense interest because of its great potential for nanoelectronics applications. Much effort has been devoted to synthesize semiconducting Bernal (AB)‐stacked bilayer graphene because of its tunable band structure and electronic properties that are unavailable to single‐layer graphene. However, fast growth of large‐scale bilayer graphene sheets with a high AB‐stacking ratio and high mobility on copper poses a tremendous challenge, which has to overcome the self‐limiting effect. This study reports a low‐cost but facile method to rapidly synthesize bilayer Bernal graphene by atmospheric pressure chemical vapor deposition using polystyrene as the feedstock. The bilayer graphene grains and continuous film obtained are of high quality and exhibit field‐effect hole mobilities as high as 5700 and 2200 cm2V−1s−1at room temperature, respectively. In addition, a synchronous growth mechanism of bilayer graphene is revealed by monitoring the growth process, resulting in a high surface coverage of nearly 100% for a near‐perfect AB‐stacking order. This new synthesis route is significant for industrial application of bilayer graphene and investigation of the growth mechanism of graphene by the chemical vapor deposition process.