Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers
Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers
复制标题
计算多维异质结构的光学特性：在四元量子阱激光器建模中的应用
DOI：
10.1109/3.247701
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发表时间：
1993
影响因子：
2.5
通讯作者：
G. Baraff
中科院分区：
文献类型：
--
作者：
D. Gershoni;C. Henry;G. Baraff
描述了一种计算多维半导体量子结构的电子态和光学性质的方法。该方法适用于任意维度限制的异质结构：例如块体、量子阱、量子线和量子点。它在这里用于模拟体和多量子阱 (MQW) InGaAsP 有源层四元激光器。建模所需的四元系统的能带参数是从现有文献中插值得到的。我们比较了块体与 MQW 性能、压缩和拉伸应变的影响、室温与高温操作以及 1.3 与 1.55 pm 波长操作。我们的模型表明：压缩应变提高了 MQW 激光器的性能。与体激光器相比，MQW 激光器具有更高的每载流子放大率和更高的差分增益，但是，由于占用了非激光微带，MQW 的性能远非理想。这会导致阈值处的载流子密度高于体激光器，并且可能会抵消 MQW 激光器相对于体器件在高温操作方面的优势。 >
A method for calculating the electronic states and optical properties of multidimensional semiconductor quantum structures is described. The method is applicable to heterostructures with confinement in any number of dimensions: e.g. bulk, quantum wells, quantum wires and quantum dots. It is applied here to model bulk and multiquantum well (MQW) InGaAsP active layer quaternary lasers. The band parameters of the quaternary system required for the modeling are interpolated from the available literature. We compare bulk versus MQW performance, the effects of compressive and tensile strain, room temperature versus high temperature operation and 1.3 versus 1.55 pm wavelength operation. Our model shows that: compressive strain improves MQW laser performance. MQW lasers have higher amplification per carrier and higher differential gain than bulk lasers, however, MQW performance is far from ideal because of occupation of non-lasing minibands. This results in higher carrier densities at threshold than in bulk lasers, and may nullify the advantage of MQW lasers over bulk devices for high temperature operation. >