High critical current density in high field in Sm/sub 1+x/Ba/sub 2-x/Cu/sub 3/O/sub 6+y/ thin films
High critical current density in high field in Sm/sub 1+x/Ba/sub 2-x/Cu/sub 3/O/sub 6+y/ thin films
复制标题
Sm/sub 1 x/Ba/sub 2-x/Cu/sub 3/O/sub 6 y/薄膜在高场下具有高临界电流密度
DOI：
10.1109/tasc.2005.847798
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发表时间：
2005
影响因子：
1.8
通讯作者：
M. Mukaida
中科院分区：
文献类型：
--
作者：
Y. Yoshida;Y. Ichino;M. Miura;Y. Takai;K. Matsumoto;A. Ichinose;S. Horii;M. Mukaida
报道了SmBa/sub 2/Cu/sub 3/O/sub 7-x/（SmBCO）外延薄膜的临界电流密度（J/sub c/）、不可逆场（B/sub irr/）和微结构。我们开发了一种在相对较低的衬底温度下在MgO上存款高性能Sm/sub 1+x/Ba/sub 2-x/Cu/sub 3/O/sub 6+y/（Sm-123）的新方法。在高衬底温度下生长的SmBCO籽晶层使我们能够获得完全c轴取向的SmBCO薄膜，在77 K下，B//c的临界电流密度（J/sub c/）在5 T下为2.8/spl times/10/sup 5/ A/cm/sup 2/。该值与在4.2K下针对5 T实现的优化NbTi超导线材中的值一样高。与YBa/sub 2/Cu/sub 3/O/sub 7-y/薄膜相比，Sm-12 3薄膜在77 K的高场下具有更高的J/sub c/。透射电子显微镜TEM分析澄清了Sm-123基质组成中的Sm/Ba组成比波动，其范围为x=0/spl sim/0.14，波长为50/spl sim/100 nm。
Critical current density (J/sub c/), irreversibility field (B/sub irr/) and microstructure in epitaxial SmBa/sub 2/Cu/sub 3/O/sub 7-x/ (SmBCO) films are reported. We have developed a novel approach to deposit high performance Sm/sub 1+x/Ba/sub 2-x/Cu/sub 3/O/sub 6+y/ (Sm-123) at relatively low substrate temperature on MgO. The use of thin SmBCO seed layer grown at a high substrate temperature enabled us to obtain fully c-axis oriented SmBCO films with high critical current density (J/sub c/) of 2.8/spl times/10/sup 5/ A/cm/sup 2/ under 5 T for B//c at 77 K. This value is as high as in the optimized NbTi superconducting wires achieved for 5 T at 4.2 K. Compared with YBa/sub 2/Cu/sub 3/O/sub 7-y/ films, Sm-123 films showed higher J/sub c/ in high fields at 77 K. Transmission electron microscopy TEM analyses clarified the Sm/Ba composition ratio fluctuations in the Sm-123 matrix composition in the range of x=0/spl sim/0.14 with a wavelength of 50/spl sim/100 nm.