Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures
Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures
复制标题
II 型 GaAs/AlAs 多量子阱结构中光生电子的 Γ 到 X 传输
DOI：
10.1063/1.101302
复制
发表时间：
1989
期刊：
影响因子：
--
通讯作者：
B. A. Wilson
中科院分区：
文献类型：
--
作者：
P. Saeta;J. Federici;R. Fischer;B. Greene;L. Pfeiffer;R. Spitzer;B. A. Wilson
We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8‐ and 11‐monolayer‐thick GaAs samples, respectively.
