Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact
Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact
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DOI：
10.1103/physrevlett.118.146801
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发表时间：
2017-04-05
影响因子：
8.6
通讯作者：
Hamilton, A. R.
中科院分区：
文献类型：
--
作者：
Srinivasan, A.;Miserev, D. S.;Hamilton, A. R.
我们研究了GaAs空穴量子点接触中塞曼相互作用与反转不对称性引起的自旋轨道相互作用（Rashba和Dresselhaus SOI）之间的关系。强SOI的存在导致相邻自旋分裂空穴子带在磁场中的交叉和反交叉。我们从理论上和实验上证明，反交叉能隙取决于SOI条款和高度各向异性的空穴g张量之间的相互作用，这种相互作用可以通过选择晶体轴沿着的电流和磁场对齐。我们的研究结果构成了独立的检测和控制的Dresselhaus和Rashba SOI的孔系统，这可能是重要的自旋电子学和量子信息的应用。
We investigate the relationship between the Zeeman interaction and the inversion-asymmetry-induced spin-orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in the crossing and anticrossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anticrossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute the independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.