Synthesis of nanocrystalline GaN from Ga2O3 nanoparticles derived from salt-assisted spray pyrolysis
Synthesis of nanocrystalline GaN from Ga2O3 nanoparticles derived from salt-assisted spray pyrolysis
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DOI：
10.1016/j.apt.2008.10.005
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发表时间：
2009-01-01
影响因子：
5.2
通讯作者：
Okuyama, Kikuo
中科院分区：
文献类型：
--
作者：
Ogi, Takashi;Kaihatsu, Yutaka;Okuyama, Kikuo
以纳米氧化镓(Ga2O3)为原料，在氨气气氛中成功制备了GaN纳米颗粒。采用盐辅助喷雾热解(SASP)法制备了纳米氧化镓。在前驱体溶液中加入助熔剂(LiCl5摩尔/L)，在不同温度下得到了平均直径约为10 nm的高结晶度的Ga2O_3纳米粒子。用X射线衍射仪和扫描/透射电子显微镜研究了Ga2O_3颗粒的结晶度和氮化时间对GaN相转变的影响。以结晶度相对较低的Ga2O_3纳米粒子为原料，得到了平均尺寸为23.4 nm、几何标准偏差为1.68 nm的高结晶度GaN纳米粒子。在254 nm紫外光激发下，得到的GaN纳米粒子在364 nm处有一个光致发光峰。(C)2008年，日本粉末技术学会。由爱思唯尔BV和日本粉末技术学会出版。版权所有。
Gallium nitride (GaN) nanoparticles were successfully produced from nano-sized gallium oxide (Ga2O3) particles under a flow of ammonia gas. The gallium oxide nanoparticles were prepared by salt-assisted spray pyrolysis ( SASP). Highly crystalline Ga2O3 nanoparticles with an average diameter of approximately 10 nm were obtained at various temperatures when a flux salt (LiCl, 5 mol/l) was added to the precursor solution. The effects of the crystallinity of the Ga2O3 particles and nitridation time on transformation to GaN were characterized using X-ray diffraction and scanning/transmission electron microscopy. Highly crystalline GaN nanoparticles with a mean size of 23.4 nm and a geometric standard deviation of 1.68 nm were obtained when Ga2O3 nanoparticles with relatively low crystallinity were used as the starting material. The resulting GaN nanoparticles showed a photoluminescence peak at 364 nm under UV excitation at 254 nm. (c) 2008, The Society of Powder Technology Japan. Published by Elsevier BV and The Society of Powder Technology Japan. All rights reserved.