Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
复制标题
使用用于极紫外光刻的小视场曝光工具创建潜像
DOI：
10.1143/jjap.48.106506
复制
发表时间：
2009
期刊：
影响因子：
--
通讯作者：
and S. Tagawa
中科院分区：
文献类型：
--
作者：
T. Kozawa;H. Oizumi;T. Itani;and S. Tagawa
Semiconductor Leading Edge Technologies，Inc.安装的小场曝光工具（SFET）（Selete）对于开发用于极紫外（EUV）光刻的抗蚀剂材料是必不可少的。在下一代抗蚀剂材料的开发中，分辨率、灵敏度和线边缘粗糙度（LER）之间的权衡关系是最严重的问题。在这三个特征中，LER已知与化学梯度成反比。在这项研究中，我们评估的基础上，EUV敏化机制使用SFET创建的潜像。阐明了化学梯度对分辨率和灵敏度的依赖关系，为有效评价和开发抗蚀剂材料提供了依据。LER和归一化化学梯度的乘积粗略估计为0.3-0.6。
The small-field exposure tool (SFET) installed at Semiconductor Leading Edge Technologies, Inc.(Selete) is indispensable for the development of resist materials for extreme ultraviolet (EUV) lithography. In the development of next-generation resist materials, the trade-off relationships between resolution, sensitivity, and line edge roughness (LER) are the most serious problems. Among these three features, LER is known to be inversely proportional to the chemical gradient. In this study, we evaluated latent images created using SFET on the basis of EUV sensitization mechanisms. The dependence of the chemical gradient on resolution and sensitivity was clarified for the effective evaluation and development of resist materials. The product of LER and the normalized chemical gradient was roughly estimated to be 0.3–0.6.