Band‐to‐band recombination in Ga0.5In0.5P
Band‐to‐band recombination in Ga0.5In0.5P
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Ga0.5In0.5P 中的能带复合
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
A. Ishibashi
中科院分区：
文献类型：
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作者：
U. Strauss;W. Rühle;H. Queisser;K. Nakano;A. Ishibashi
利用瞬态谱的线形分析，通过时间分辨的光致发光测量，研究了强激发、未掺杂Ga 0. 5In 0. 5P中电子空穴等离子体在300和150 K下的复合动力学。辐射复合占主导地位，并且在我们的最高载流子浓度1.5×1019 cm−3之前没有观察到俄歇效应的影响。无序合金和有序合金具有相同的复合率。在300和150 K下，辐射复合系数分别为（1.0±0.3）×10−10和（4±1）×10−10 cm 3 s−1。俄歇系数的上限在300 K时为3×10−30 cm 6 s−1。
The recombination kinetics of the electron‐hole plasma in strongly excited, undoped Ga0.5In0.5P are investigated at 300 and 150 K by time‐resolved photoluminescence measurements using line‐shape analysis of transient spectra. Radiative recombination dominates, and no influence of the Auger effect is observed up to our highest carrier concentration of 1.5×1019 cm−3. Random alloy and ordered samples have the same recombination rate. The radiative recombination coefficients are found to be (1.0±0.3)×10−10 and (4±1)×10−10 cm3 s−1 at 300 and 150 K, respectively. An upper limit for the Auger coefficient is 3×10−30 cm6 s−1 at 300 K.