High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111)
High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111)
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DOI：
10.1063/1.1828580
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发表时间：
2004-11-29
影响因子：
4
通讯作者：
Kunze, M
中科院分区：
文献类型：
--
作者：
Dadgar, A;Schulze, F;Kunze, M
AlInN/GaN 异质结构被认为具有比 AlGaN/GaN 更优越的场效应晶体管 (FET) 特性 [Kuzmik, IEEE Electron Device Lett. 22、501（2001）；山口，物理学家。状态 Solidi A 188, 895 (2001)]。这种结构的主要优点是AlInN可以与GaN晶格匹配地生长，同时仍然通过自发极化的差异在约2.7x10(13)cm(-3)的异质界面处诱导高载流子密度。此外，它还提供比 AlGaN 更高的 GaN 能带偏移。我们通过金属有机化学气相外延在 Si(111) 衬底上生长 AlInN FET 结构，In 浓度范围为 9.5% 至 24%。几乎晶格匹配的结构显示片状载流子密度为3.2x10(13)cm(-2)，迁移率类似于406cm(2)/Vs。对于栅极长度为 1 μm 的器件，此类 Al0.84In0.16N FET 的最大直流电流为 1.33 A/mm。 (C) 2004 年美国物理研究所。
AlInN/GaN heterostructures have been proposed to possess advantageous properties for field-effect transistors (FETs) over AlGaN/GaN [Kuzmik, IEEE Electron Device Lett. 22, 501 (2001); Yamaguchi , Phys. Status Solidi A 188, 895 (2001)]. A major advantage of such structures is that AlInN can be grown lattice-matched to GaN while still inducing high charge carrier densities at the heterointerface of around 2.7x10(13) cm(-3) by the differences in spontaneous polarization. Additionally, it offers a higher band offset to GaN than AlGaN. We grew AlInN FET structures on Si(111) substrates by metalorganic chemical vapor phase epitaxy with In concentrations ranging from 9.5% to 24%. Nearly lattice-matched structures show sheet carrier densities of 3.2x10(13) cm(-2) and mobilities of similar to406 cm(2)/V s. Such Al0.84In0.16N FETs have maximum dc currents of 1.33 A/mm for devices with 1 mum gate length. (C) 2004 American Institute of Physics.