Growth and optical activity of strontium tantalum gallium silicon oxide (Sr3TaGa3Si2O14, STGS)
Growth and optical activity of strontium tantalum gallium silicon oxide (Sr3TaGa3Si2O14, STGS)
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DOI：
10.1002/pssa.200306627
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发表时间：
2003-08
期刊：
影响因子：
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通讯作者：
R. Heimann;M. Hengst;M. Rossberg;J. Bohm
中科院分区：
文献类型：
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作者：
R. Heimann;M. Hengst;M. Rossberg;J. Bohm
采用传统的Czochralski熔体拉拔技术沿直角y轴生长出了高质量的锶钽镓氧化硅单晶[12.0]。晶体生长时具有原子光滑的相边界，沿整个晶体长度的直线生长条纹证实了这一点。测定了c-(Z)方向（光轴）的光透射率是波长f（λ）在350 nm和850 nm之间的函数。从交叉偏振光片之间的周期性光传输曲线的极值处得到了波长为300 nm的175°/mm的比旋转。该值低于230°/mm的SNGS。
Single crystals of strontium tantalum gallium silicon oxide were grown with high perfection along the Cartesian Y-axis [12.0] by conventional Czochralski melt pulling technique. The crystals grew with an atomically smooth phase boundary as confirmed by straight growth striations along the entire length of the crystal. The optical transmission in the c-(Z)direction (optical axis) was determined as a function of the wavelength f(λ) between 350 nm and 850 nm. From the extrema of the periodic optical transmission curve between crossed polarisers a specific rotation of 175°/mm at a wavelength of 300 nm was obtained. This values is lower than that of SNGS with 230°/mm.