Influence of detector surface processing on detector performance
Influence of detector surface processing on detector performance
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DOI：
10.1016/s0168-9002(00)00868-8
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发表时间：
2001-02
影响因子：
1.4
通讯作者：
A. Rybka;S. A. Leonov;I. M. Prokhoretz;A. Abyzov;L. Davydov;V. Kutny;M. S. Rowland;Craig F. Smith
中科院分区：
文献类型：
--
作者：
A. Rybka;S. A. Leonov;I. M. Prokhoretz;A. Abyzov;L. Davydov;V. Kutny;M. S. Rowland;Craig F. Smith
γ射线半导体探测器的性能主要取决于晶体表面的性质。侧表面的状态影响检测器的表面漏电流，并且其上形成接触的表面的状态影响接触的性质，并且因此影响体积漏电流和最高可能的偏置电压。本文研究了高压布里奇曼法生长的CdZnTe和CdTe晶体侧面的几种处理方法：化学腐蚀、离子清洗、钝化。研究了晶体表面预处理对欧姆接触特性的影响。进行了表面处理的晶体的电物理性质的分析。
Characteristics of gamma ray semiconductor detectors essentially depend on properties of crystal surface. The status of a lateral surface influences surface leakage current of the detector, and the status of a surface, on which the contacts are made, influences properties of contacts and, thus, a volume leakage current and the highest possible bias voltage. In this connection several ways of processing the lateral surface of CdZnTe and CdTe crystals grown by a high-pressure Bridgman method were investigated: chemical etching, ion cleaning, passivation. Influence of a preliminary processing of a crystal surface on the properties of ohmic contacts is investigated. An analysis of electrophysical properties of crystals subjected to surface processing is carried out.