Stacking of nanocrystalline graphene for nano-electro-mechanical (NEM) actuator applications
Stacking of nanocrystalline graphene for nano-electro-mechanical (NEM) actuator applications
复制标题
用于纳米机电（NEM）执行器应用的纳米晶石墨烯堆叠
DOI：
10.1007/s00542-018-4180-z
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
and H. Mizuta
中科院分区：
文献类型：
--
作者：
K. Jothiramalingam;M. E. Schmidt;M. Muruganathan;A. M.M Hammam;and H. Mizuta
石墨烯纳米机电开关因其低拉入电压和低接触电阻等优良的开关性能而成为极具发展前景的器件。用合适的对电极批量制造仍然具有挑战性。在这项工作中，我们报道了纳米晶体石墨烯（NCG）与70 nm介电分离层的堆叠。埋设的NCG层通过形成通孔进行接触，起到驱动电极的作用。金属化后，将顶部的7.5 nm薄NCG层进行图案化，形成双箝位梁，并通过氢氟酸蚀刻释放结构。通过在顶部和埋地NCG层之间施加电压，观察到1.5 V以下的阶梯式电流增加，这是由可动梁与埋地NCG接触引起的。由于牺牲层薄，梁长大，没有出现拉出现象，导致机械恢复力低。我们讨论了NCG堆叠方法在实现纳米机电触点开关和先进逻辑元件（如and逻辑）方面的可能应用。
Graphene nano-electro-mechanical switches are promising components due to their excellent switching performance such as low pull-in voltage and low contact resistance. Mass fabrication with an appropriate counter electrode remains challenging. In this work, we report the stacking of nanocrystalline graphene (NCG) with a 70-nm dielectric separation layer. The buried NCG layer is contacted through the formation of vias and acts as actuation electrode. After metallization, the top 7.5-nm thin NCG layer is patterned to form double-clamped beams, and the structure is released by hydrofluoric acid etching. By applying a voltage between the top and buried NCG layer, a step-like current increase is observed below 1.5 V, caused by the contact of the movable beam with the buried NCG. No pull-out is observed due to the thin sacrificial layer and high beam length, resulting in low mechanical restoring force. We discuss the possible applications of the NCG stacking approach to realize nano-electro-mechanical contact switches and advanced logical components such as a AND logic.
打开、关闭：纳米机电开关中的粘滞
影响因子：
3.5
作者：
T. Wagner;D. Vella
通讯作者：
D. Vella
具有亚微米接触区域的 MEM 逻辑继电器的粘附力表征
影响因子：
2.7
作者：
Jack Yaung;L. Hutin;J. Jeon;T. Liu
通讯作者：
T. Liu