Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN
Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN
复制标题
DOI：
10.1002/pssb.200674865
复制
发表时间：
2007-06
期刊：
影响因子：
--
通讯作者：
K. Kojima;M. Ueda;M. Funato;Y. Kawakami
中科院分区：
文献类型：
--
作者：
K. Kojima;M. Ueda;M. Funato;Y. Kawakami
本文利用光致发光、光反射和k·p微扰理论研究了半极性和非极性无应变GaN的光学性质。我们发现，{11$ \bar 2 $2}和{10$ \bar 1 $0} GaN中施主束缚态和自由态的A激子的光致发光都表现出很强的偏振性，而B激子的光致发光对晶体取向的依赖性很小。光学反射率测量也被用来研究自由激子的共振能和跃迁几率。A和C激子的振子强度对c轴和生长方向之间的角度具有很强的依赖性，而B的振子强度在每个未应变的GaN平面中几乎不变。我们的k·p计算可以很好地解释实验结果。（© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Optical properties of semipolar and nonpolar unstrained GaN are studied employing photoluminescence, optical reflectance and the k·p perturbation theory in this article. We find that donor bound and free A excitons show a strong polarization for photoluminescence in {11$ \bar 2 $2} and {10$ \bar 1 $0} GaN, while that of B excitons has only a little dependence on crystal orientations. Optical reflectance measurements are also performed to investigate resonance energies and transition probabilities of free excitons. The oscillator strength of A and C excitons has a strong dependency on the angle between c‐axis and growth direction, while that of B is nearly unchanged in every unstrained GaN plane. The experimental results can be well explained by our k·p calculations. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)