Fabrication of 5 nm gap pillar electrodes by electron-beam Pt deposition
Fabrication of 5 nm gap pillar electrodes by electron-beam Pt deposition
复制标题
通过电子束 Pt 沉积制造 5 nm 间隙柱电极
DOI：
10.1116/1.1872015
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发表时间：
2005
影响因子：
1.4
通讯作者：
S. Frabboni
中科院分区：
文献类型：
--
作者：
G. Gazzadi;S. Frabboni
使用聚焦离子束（FIB）-扫描电子显微镜（SEM）工作站，通过扫描电子显微镜辅助的Pt沉积在FIB图案化的Au焊盘之间生长独立纳米电极。首先生长两个柱状电极，其具有相反倾斜的几何形状，间距高达120 nm。通过在前体气流下在柱尖端上进行SEM扫描，在实时成像模式下监测到间隙减小到5 nm。通过透射电子显微镜（TEM）分析表明，存款由嵌入在非晶C中的Pt微晶组成。局部退火的高电流TEM照射增加的Pt晶粒的尺寸，产生清晰的衍射环。退火过程不影响尖端的整体形状，表明柱的良好机械稳定性。我们展示了这种FIB-SEM方法如何适合于通过在倾斜电极差距下方沉积第三柱状电极来制造多电极纳米结构。
Using a focused ion beam (FIB)-scanning electron microscope (SEM) workstation, free-standing nanoelectrodes were grown by SEM-assisted Pt deposition between FIB-patterned Au pads. Two pillar electrodes were first grown with opposite-tilted geometries up to a spacing of 120nm. By SEM scanning over the pillar tips, under a precursor gas flow, gap reduction down to 5nm was monitored in live imaging mode. As shown by transmission electron microscopy (TEM) analysis, the deposit consisted of Pt crystallites embedded in amorphous C. Local annealing by high-current TEM irradiation increased the size of the Pt grains, which produced clear diffraction rings. The annealing procedure did not affect the overall shape of the tips, indicating good mechanical stability of the pillars. We show how this FIB-SEM approach is suitable to fabricate multielectrode nanostructures by depositing a third pillar electrode below the gap of the tilted electrodes.