Synthesis and Thermoelectric Properties of Silicon- and Manganese-Doped Ru1-xFexAl2.
Synthesis and Thermoelectric Properties of Silicon- and Manganese-Doped Ru1-xFexAl2.
复制标题
硅和锰掺杂 Ru1-xFexAl2 的合成和热电性能。
DOI：
10.1002/chin.201021009
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
S. Yamanaka
中科院分区：
文献类型：
--
作者：
Shoji Takahashi;H. Muta;K. Kurosaki;S. Yamanaka
摘要采用电弧熔炼法制备了Si和mn掺杂Ru 1−x Fe x Al 2 （x = 0.0, 0.1, 0.15）的多晶材料。从室温到1000 K左右测量了它们的热电和输运特性。导热系数随着Ru 1−x Fe x Al 2 （x = 0.0, 0.1, 0.15）铁含量的增加而降低。在电学性能方面，mn掺杂样品在整个温度范围内均表现为p型导电。Mn掺杂使载流子浓度增加，电阻率和正塞贝克系数均降低。si掺杂样品在400 K以下表现为n型导电，在500 K以上由于重空穴激发，Seebeck系数的符号变为正。p型Ru 0.85 Fe 0.15 Al 2的ZT值为0.17，n型Ru 0.85 Fe 0.15 Al 1.95 Si 0.05的ZT值为0.05。
Abstract Polycrystalline Si- and Mn-doped Ru 1− x Fe x Al 2 ( x = 0.0, 0.1, 0.15) were prepared by arc melting. Their thermoelectric and transport properties were measured from room temperature to around 1000 K. The thermal conductivity decreased with increasing Fe composition of Ru 1− x Fe x Al 2 ( x = 0.0, 0.1, 0.15). As for their electrical properties, Mn-doped samples showed p-type conduction in the whole temperature range. Mn doping caused both the electrical resistivity and the positive Seebeck coefficient to decrease due to the increase of carrier concentration. Si-doped samples showed n-type conduction below 400 K, and the sign of the Seebeck coefficient changed to positive above 500 K because of the heavy hole excitation. The ZT value reached 0.17 for p-type Ru 0.85 Fe 0.15 Al 2 and 0.05 for n-type Ru 0.85 Fe 0.15 Al 1.95 Si 0.05 .
影响因子：
56.9
作者：
Heremans, Joseph P.;Jovovic, Vladimir;Snyder, G. Jeffrey
通讯作者：
Snyder, G. Jeffrey