Charge-transfer processes in semiconductor colloids
Charge-transfer processes in semiconductor colloids
复制标题
半导体胶体中的电荷转移过程
DOI：
10.1117/12.17896
复制
发表时间：
1990
期刊：
影响因子：
--
通讯作者：
K. R. Gopidas
中科院分区：
文献类型：
--
作者：
P. Kamat;K. R. Gopidas
A picosecond transient absorption spectroscopy technique has been employed to probe the charge transfer processes in Ti02 semiconductor colloids. The trapping of electrons at the TiO surface (Ti4+ sitesY was characterized from the appearance of a broad absorption in the region of 550-750 nm following the 355-nm laser pulse excitation of Ti02 colloids. The lifetime of these trapped charge carriers increased upon incorporation of a hole scavenger in the colloidal semiconductor system. The mechanistic and kinetic details of the charge injection from excited CdS into a large bandgap semiconductor such as AgI and Ti02 have also been inves-' t i ga ted.
