Evaluation of crystallinity and film stress in yttria-stabilized zirconia thin films
Evaluation of crystallinity and film stress in yttria-stabilized zirconia thin films
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氧化钇稳定氧化锆薄膜结晶度和薄膜应力的评估
DOI：
10.1116/1.2011403
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
B. Stoner
中科院分区：
文献类型：
--
作者：
J. Piascik;Jeffrey Y. Thompson;C. Bower;B. Stoner
采用射频磁控溅射法制备了氧化钇稳定的氧化锆（YSZ）薄膜。YSZ薄膜在温度（22-300 °C）、压力（5-25 mTorr）和气体组成（Ar scinO比率）的范围内沉积。初步研究的特点是一组选定的属性，包括沉积参数：折射率，结构和薄膜应力。X射线衍射（XRD）表明，薄膜主要由单斜和四方晶相组成。棱镜耦合确定的膜的折射率，强烈依赖于沉积条件和范围从1.959到2.223。晶片弯曲测量表明，溅射的YSZ膜可以具有从86 MPa拉伸到192 MPa压缩的初始应力范围，这取决于沉积参数。暴露于环境条件（25 °C，75%相对湿度）导致膜的压缩应力大幅增加（约100 MPa）。环境老化表明压缩应力的变化...
Yttria (3 mol %)-stabilized zirconia (YSZ) thin films were deposited using radio frequency (rf) magnetron sputtering. The YSZ thin films were deposited over a range of temperatures (22–300 °C), pressures (5–25 mTorr), and gas compositions (Ar∕O ratio). Initial studies characterized a select set of properties in relation to deposition parameters including: refractive index, structure, and film stress. X-ray diffraction (XRD) showed that the films are comprised of mainly monoclinic and tetragonal crystal phases. The film refractive index determined by prism coupling, depends strongly on deposition conditions and ranged from 1.959 to 2.223. Wafer bow measurements indicate that the sputtered YSZ films can have initial stress ranging from 86 MPa tensile to 192 MPa compressive, depending on the deposition parameters. Exposure to ambient conditions (25 °C, 75% relative humidity) led to large increase (∼100MPa) in the compressive stress of the films. Environmental aging suggests the change in compressive stress ...