Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content
Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content
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高In含量InGaN/GaN量子阱结构中载流子散射和库仑屏蔽对光致发光的综合影响
DOI：
10.1088/1674-1056/abd692
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Zi-Wu Ji
中科院分区：
文献类型：
--
作者：
Rui Li;Ming-Sheng Xu;Peng Wang;Cheng-Xin Wang;Shang-Da Qu;Kai-Ju Shi;Ye-Hui Wei;Xian-Gang Xu;Zi-Wu Ji
Photoluminescence (PL) spectra of two different green InGaN/GaN multiple quantum well (MQW) samples S1 and S2, respectively with a higher growth temperature and a lower growth temperature of InGaN well layers are analyzed over a wide temperature range of
