Noise modeling methodologies in the presence of mobility degradation and their equivalence
Noise modeling methodologies in the presence of mobility degradation and their equivalence
复制标题
存在迁移率下降的噪声建模方法及其等效方法
DOI：
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发表时间：
2006
影响因子：
3.1
通讯作者：
J. Sallese
中科院分区：
文献类型：
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作者：
A. Roy;C. Enz;J. Sallese
对于器件中噪声的紧凑建模，通常应用以下三种方法之一：1）基于等效电路的方法，2）经典的Langevin或Klaassen-Prins方法，或3）阻抗场方法。众所周知，对于长沟道MOST（其中不存在由于横向场导致的迁移率下降），所有三种方法都会获得相同的结果。但是，当迁移率开始依赖于电场时，这些方法需要如何改变，这仍然没有被认识到。在这项工作中，我们演示了如何将这些方法可以适应迁移率退化，并表明，对于任何任意的迁移率模型/spl μ/（E）的所有方法产生相同的表达式为感应栅极和漏极噪声电流，这表明了方法的等效性。我们还提出了，第一次，诱导栅噪声，这是有效的任何迁移率模型的一般表达式（漏电流噪声的表达式已经在我们以前的工作）和一些非常一般的表达式的噪声参数，可用于噪声建模与任何类型的迁移率模型。
For compact modeling of the noise in devices, one of the following three methods is usually applied: 1) An equivalent circuit based approach, 2) the classical Langevin or Klaassen-Prins approach, or 3) the impedance field method. It is well known that for long-channel MOST (where mobility degradation due to a lateral field is absent), all three methods obtain the same result. But it is still not recognized how these methodologies need to be changed when the mobility starts to depend on the electric field. In this work we demonstrate how these methodologies can be adapted to incorporate mobility degradation and show that for any arbitrary mobility model /spl mu/(E) all the methods yield the same expressions for induced gate and drain noise current, which demonstrates the equivalence of the methods. We also present, for the first time, a general expression of induced gate noise which is valid for any mobility model (an expression of the drain current noise was already presented in our previous work) and some very general expressions of noise parameters that can be used for noise modeling with any kind of mobility model.