Mg-doping experiment and electrical transport measurement of boron nanobelts
Mg-doping experiment and electrical transport measurement of boron nanobelts
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DOI：
10.1016/j.jssc.2006.01.015
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发表时间：
2006-09
影响因子：
3.3
通讯作者：
K. Kirihara;H. Hyodo;H. Fujihisa;Z. Wang;Kenji Kawaguchi;Y. Shimizu;T. Sasaki;N. Koshizaki;K. Soga;K. Kimura
中科院分区：
文献类型：
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作者：
K. Kirihara;H. Hyodo;H. Fujihisa;Z. Wang;Kenji Kawaguchi;Y. Shimizu;T. Sasaki;N. Koshizaki;K. Soga;K. Kimura
我们测量了具有α-四方晶系结构的单晶硼纳米带的电导。采用气相扩散法进行了Mg的掺杂实验。纯硼纳米带是一种p型半导体，在室温下其电导率估计为10-3（Ωcm）− 1。纯硼纳米带的载流子迁移率在室温下测量为10−3（cm 2 Vs −1）的量级，并且具有10.19eV的激活能。Mg掺杂的硼纳米带具有与原始纳米带相同的α-四方晶系晶体结构。在Mg蒸气扩散之后，纳米带仍然是半导体的，而电导增加了100-500倍。没有观察到通过掺杂向金属或超导体的过渡。
We measured electrical conductance of single crystalline boron nanobelts having α-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. The pure boron nanobelt is a p-type semiconductor and its electrical conductivity was estimated to be on the order of 10–3(Ωcm)−1at room temperature. The carrier mobility of pure boron nanobelt was measured to be on the order of 10−3(cm2Vs−1) at room temperature and has an activation energy of ∼0.19eV. The Mg-doped boron nanobelts have the same α-tetragonal crystalline structure as the pristine nanobelts. After Mg vapor diffusion, the nanobelts were still semiconductor, while the electrical conductance increased by a factor of 100–500. Transition to metal or superconductor by doping was not observed.