165-GHz Transceiver in SiGe Technology
165-GHz Transceiver in SiGe Technology
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采用 SiGe 技术的 165 GHz 收发器
DOI：
10.1109/jssc.2008.920336
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发表时间：
2008
影响因子：
5.4
通讯作者：
S. Voinigescu
中科院分区：
文献类型：
--
作者：
E. Laskin;P. Chevalier;A. Chantre;B. Sautreuil;S. Voinigescu
两个D波段收发器，有和没有放大器和静态分频器，同时在80-GHz和160-GHz频段，在SiGe HBT技术制造。这些收发器具有一个80 GHz正交Colpitts振荡器，具有160 GHz差分输出，一个双平衡Gilbert单元混频器，170 GHz放大器和宽带70 GHz至180 GHz垂直堆叠变压器，用于单端到差分转换。对于具有放大器和静态分频器的收发器，这标志着100 GHz以上硅集成度的最高水平，165 GHz RF输入的峰值差分下变频增益为-3 dB。单端165 GHz发射机输出产生-3.5 dBm，而82.5 GHz差分输出功率为+2.5 dBm。该收发器占用840 μ m乘以1365 μ m，偏置电压为3.3 V，功耗为0.9 W。两个独立的5级放大器，中心在140 GHz和170 GHz的，也被制造显示17 dB和15 dB增益在140 GHz和170 GHz，分别。放大器的饱和输出功率在130 GHz时为+1 dBm，在165 GHz时为0 dBm。所有电路的特征在于温度高达125摄氏度。这些结果首次证明了SiGe BiCMOS技术在100-180 GHz范围内电路的可行性。
Two D-band transceivers, with and without amplifiers and static frequency divider, transmitting simultaneously in the 80-GHz and 160-GHz bands, are fabricated in SiGe HBT technology. The transceivers feature an 80-GHz quadrature Colpitts oscillator with differential outputs at 160 GHz, a double-balanced Gilbert-cell mixer, 170-GHz amplifiers and broadband 70-GHz to 180-GHz vertically stacked transformers for single-ended to differential conversion. For the transceiver with amplifiers and static frequency divider, which marks the highest level of integration above 100 GHz in silicon, the peak differential down-conversion gain is -3 dB for RF inputs at 165 GHz. The single-ended, 165-GHz transmitter output generates -3.5 dBm, while the 82.5-GHz differential output power is +2.5 dBm. This transceiver occupies 840 mum times 1365 mum, is biased from 3.3 V, and consumes 0.9 W. Two stand-alone 5-stage amplifiers, centered at 140 GHz and 170 GHz, were also fabricated showing 17 dB and 15 dB gain at 140 GHz and 170 GHz, respectively. The saturated output power of the amplifiers is +1 dBm at 130 GHz and 0 dBm at 165 GHz. All circuits were characterized over temperature up to 125degC. These results demonstrate for the first time the feasibility of SiGe BiCMOS technology for circuits in the 100-180-GHz range.