Low-Resistivity 10 nm Diameter Magnetic Sensors
Low-Resistivity 10 nm Diameter Magnetic Sensors
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DOI：
10.1021/nl301610z
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发表时间：
2012-08-01
期刊：
影响因子：
10.8
通讯作者：
Stadler, Bethanie J. H.
中科院分区：
文献类型：
--
作者：
Maqableh, Mazin M.;Huang, Xiaobo;Stadler, Bethanie J. H.
电阻率为5.4 μ ω。Cm在直径为10nm的金属丝中测量。低电阻对于未来的互连非常重要，以防止加热，电迁移，高功耗和长RC时间常数。为了演示这些导线的应用，合成了20-30 ω和19%磁阻的Co/Cu/Co磁传感器。与传统的光刻生产磁隧道结传感器相比，这些结构易于制造，并且由于原位模板化学生长的光滑侧壁，电阻降低了2个数量级以上。
Resistivities of 5.4 mu Omega.cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 Omega and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.