On the Role of the N–N$^{+}$ Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior
On the Role of the N–N$^{+}$ Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior
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DOI：
10.1109/tpel.2007.911882
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发表时间：
2008
影响因子：
6.7
通讯作者：
B. Allard;H. Garrab;T. Ben Salah;H. Morel;K. Ammous;K. Besbes
中科院分区：
文献类型：
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作者：
B. Allard;H. Garrab;T. Ben Salah;H. Morel;K. Ammous;K. Besbes
本文着重研究了PiN二极管的N-N结掺杂分布模型对其关断瞬态特性的影响，特别是多重外延对N-N结掺杂分布的影响。一个传统的掺杂分布模型已被用于在以前的工作和主要设计参数的识别程序已被证明。然而，识别的PiN二极管模型的有效性范围似乎相当有限的硬电流和电压条件。读者要求更先进的兴奋剂概况的影响。STTB 506 D器件的关断瞬态被认为是从实验和仿真的角度来看，在一个完全特征化的开关单元。传统的掺杂分布模型的局限性，证明和物理解释，以引入一个更复杂的掺杂分布的必要性。先进的掺杂分布，然后被认为是实验和模拟的器件的关断瞬态行为之间的比较研究建立。
This paper focuses on the role of the N-N junction doping profile model of a PiN diode on its turn-off transient and, particularly, the influence of multiple epitaxies in the N-N profile. A conventional doping profile model has been used in a previous work and an identification procedure for the main design parameters has been demonstrated. However the validity range of identified PiN-diode models appeared quite limited for hard current and voltage conditions. Readers have asked for the effect of a more advanced doping profile. The turn-off transient of an STTB506D device is considered from experimental and simulation point-of-view inside a fully characterized switching cell. A limitation of the conventional doping profile model is demonstrated and explained physically in order to introduce the necessity of a more complex doping profile. An advanced doping profile is then considered and a comparative study between experimental and simulated turn-off transient behavior of the device is established.