Stree-induced photoluminescene in pure silica optical fibers
Stree-induced photoluminescene in pure silica optical fibers
复制标题
纯石英光纤中的斯特里诱导光致发光
DOI：
10.1016/0022-3093(88)90087-7
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发表时间：
1988
影响因子：
3.5
通讯作者：
H. Hanafusa
中科院分区：
文献类型：
--
作者：
Y. Hibino;H. Hanafusa
通过对石英光纤施加高达4GPa的拉应力，研究了非桥氧空穴中心（NBOHC）的光致发光（PL）变化。NBOHCs的形成，即Si O键断裂，与二氧化硅玻璃中价替代（VA）缺陷的形成有关。光致发光强度随着外加应力的增加而增加，应力释放后几乎恢复到初始状态。然而，由4GPa的应力诱导的NBOHC的浓度非常低（约1014 spin/g）。因此，它是第一次发现，施加的应力引起的Si O键断裂，这是形成VA缺陷的第一步。此外，PL强度的可逆变化表明，悬挂键不能轻易地转换为石英玻璃中的VA缺陷。
Changes in photoluminescence (PL) originating from non-bridging oxygen hole centers (NBOHCs) are investigated by applying tensile stress up to 4GPa to silica optical fibers. The formation of NBOHCs, that is, SiO bond breakage, is related to the formation of valence alternative (VA) defects in silica glass. The PL intensity increases with increasing applied stress and almost reverts to the initial state on release of the stress. The concentration of NBOHCs induced by a stress of 4 GPa is, however, very low (about 1014spin/g). Thus, it is found the first time that applied stress causes the SiO bond breakage, which is the first step for the formation of VA defects. Moreover, the reversible change in PL intensity indicates that dangling bonds cannot be converted easily to VA defects in silica glass.