Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs
Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs
复制标题
InP HEMT 上的温度相关小信号和噪声参数测量和建模
DOI：
10.1109/22.899016
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发表时间：
2000
影响因子：
4.3
通讯作者：
Po
中科院分区：
文献类型：
--
作者：
M. R. Murti;J. Laskar;S. Nuttinck;S. Yoo;A. Raghavan;J. Bergman;J. Bautista;R. Lai;R. Grundbacher;M. Barsky;P. Chin;Po
In this paper, we present detailed on-wafer S-parameter and noise parameter measurements and modeling of ZnP/InAlAs/InGaAs high electron mobility transistors (0.1-/spl mu/m gate length) at cryogenic temperatures. Various physical effects influencing small-signal parameters, especially the radio-frequency (RF) transconductance and RF output resistance and their temperature dependence, are discussed in detail. Accurate on-wafer noise parameter measurements are carried out from 300 to 18 K, and the variation of the equivalent noise temperatures of drain and source (T/sub d/ and T/sub g/) are modeled against temperature. Based on these models, a cryogenic low-noise amplifier in the K/spl alpha/-band is developed with a record low noise temperature of 10 K.
