Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation
Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation
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DOI：
10.4028/www.scientific.net/msf.483-485.693
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发表时间：
2005-01-01
期刊：
影响因子：
--
通讯作者：
Schöner, A
中科院分区：
文献类型：
--
作者：
Ciobanu, F;Pensl, G;Schöner, A
在标准氧化工艺之前，将表面近高斯氮（N）分布注入到n型4 H-SiC外延层中。取决于氧化层的深度和注入的N浓度，在相应的4 H-SiC MOS电容器中确定的界面态密度D-IT降低到约为100的最小值。10（10）cm（-2）eV（-1），而平带电压由于产生的固定正电荷而增加到负值。一个薄的表面附近的层，这是高度N掺杂的化学气相沉积生长过程中，导致减少的DIT仅接近导带边缘。
A surface-near Gaussian nitrogen (N) profile is implanted into n-type 4H-SiC epilayers prior to a standard oxidation process. Depending on the depth of the oxidized layer and on the implanted N concentration, the density of interface states D-IT determined in corresponding 4H-SiC MOS capacitors decreases to a minimum value of approx. 10(10) cm(-2) eV(-1) in the investigated energy range (E-C-(0.1 eV to 0.6 eV)), while the flat-band voltage increases to negative values due to generated fixed positive charges. A thin surface-near layer, which is highly N-doped during the chemical vapour deposition growth, leads to a reduction of DIT only close to the conduction band edge.