Effects of bombardment by high energy gas cluster ion beams
Effects of bombardment by high energy gas cluster ion beams
复制标题
高能气体团簇离子束轰击的影响
DOI：
10.1016/s0921-5093(96)10300-2
复制
发表时间：
1996
期刊：
影响因子：
6.4
通讯作者：
I. Yamada
中科院分区：
文献类型：
--
作者：
D. Takeuchi;J. Matsuo;A. Kitai;I. Yamada
我们建立了一个200 keV的气体团簇注入系统，并采用了E × B质量过滤器（Wien filter），选择团簇尺寸为1-4000原子，研究了Ar团簇离子轰击Si（100）表面的效应。损伤层分布在100 μ m和200 μ m之间，用Ar团簇离子束在150 keV的3000个原子的大小。用SiO2覆盖的Si（100）衬底对团簇尺寸效应进行了详细的研究。通过改变SiO2覆盖层的厚度，我们可以获得更详细的辐照损伤深度信息。用100 keV的500和3000原子团簇离子束辐照的损伤层分别约为130和160 μ m。然而，损伤层的深度远大于预期的值从集群的组成原子的能量的集群速度。这些结果表明，气体团簇离子辐照具有产生浅注入的能力。
We have developed a 200 keV gas cluster implantation system with a E × B mass filter (wien filter) which selects the cluster size in the range 1–4000 atoms, and studies the effects of bombarding an Si(100) surface with Ar cluster ions. Damaged layers irradiated with Ar cluster ion beams 3000 atoms in size at 150 keV were distributed between 100 Å and 200 Å. Detailed studies of the cluster size effect were achieved using Si(100) substrates which were covered with SiO2. By changing the thickness of the SiO2covering, we could obtain more detailed information on the depth of the irradiation damage. The damaged layers irradiated with 100 keV cluster ion beams of size 500 and 3000 atoms were about 130 Å and 160 Å respectively. However, the depth of the damaged layer was much greater than the value expected from the cluster velocity at the energy of the constituent atoms of the cluster. These results indicate that gas cluster ion irradiation has the capability of producing shallow implantation.