Beam Coupling in Undoped GaAs at 1.06 µm Using the Photorefractive Effect
Beam Coupling in Undoped GaAs at 1.06 µm Using the Photorefractive Effect
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利用光折变效应在 1.06 µm 未掺杂 GaAs 中进行光束耦合
DOI：
10.1142/9789812832047_0051
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发表时间：
1984
期刊：
影响因子：
--
通讯作者：
M. Klein
中科院分区：
文献类型：
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作者：
M. Klein
对于各种应用来说，持续需要1.06 µm的高效非线性材料。对于在可见光波长下的操作，最近的注意力集中在光折变材料，如LiNbO 3，KNbO 3和BaTiO 3。这些材料是有效的，但是它们的光谱响应对于在长于~600 nm的波长下的操作是不利的。我们已经确定半绝缘GaAs具有突出的光折变效应，光谱响应峰值接近1.06 µm。
There is an ongoing need for an efficient nonlinear material at 1.06 µm for a variety of applications. For operation at visible wavelengths, much recent attention has been focused on photorefractive materials such as LiNbO3, KNbO3 and BaTiO3. These materials are efficient, but their spectral response is unfavorable for operation at wavelengths longer than ~600 nm. We have determined that Semi insulating GaAs has a prominent photorefractive effect, with a spectral response peaked near 1.06 µm.