Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode
Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode
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DOI：
10.1063/1.5113544
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发表时间：
2019-08
期刊：
影响因子：
1.6
通讯作者：
Y. Goto;T. Yanase;T. Shimada;M. Shirai;T. Nagahama
中科院分区：
文献类型：
--
作者：
Y. Goto;T. Yanase;T. Shimada;M. Shirai;T. Nagahama
在磁隧道结（MTJs）中，隧道电阻随电极的相对磁结构而变化，这种效应称为隧道磁电阻（TMR）。组成电极的材料非常重要，因为TMR对电极的电子状态非常敏感。此外，界面处的结构缺陷对TMR也有显著影响。在本研究中，我们采用B2-Fe3Sn作为MTJs的磁电极。使用Fe3Sn可以解决Fe和MgO晶格不匹配的问题。然而，电极中不同原子的存在或界面氧化可能是界面缺陷的来源。我们发现含Fe3Sn的MTJs表现出50%的TMR和不对称偏置依赖。在磁隧道结（MTJs）中，隧道电阻随电极的相对磁结构而变化，这种效应称为隧道磁电阻（TMR）。组成电极的材料非常重要，因为TMR对电极的电子状态非常敏感。此外，界面处的结构缺陷对TMR也有显著影响。在本研究中，我们采用B2-Fe3Sn作为MTJs的磁电极。使用Fe3Sn可以解决Fe和MgO晶格不匹配的问题。然而，电极中不同原子的存在或界面氧化可能是界面缺陷的来源。我们发现含Fe3Sn的MTJs表现出50%的TMR和不对称偏置依赖。
In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR). The material of which the electrodes are composed is of great importance, because TMR is very sensitive to the electronic states of the electrodes. Additionally, structural defects at the interface also have a significant influence on TMR. In this study, we employ B2-Fe3Sn as the magnetic electrode of MTJs. The use of Fe3Sn could solve the problem of lattice mismatch between Fe and MgO. However, the presence of dissimilar atoms in the electrodes or interface oxidation could be a source of defects at the interface. We find that MTJs with Fe3Sn exhibit a TMR of 50% and an asymmetric bias dependence.In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR). The material of which the electrodes are composed is of great importance, because TMR is very sensitive to the electronic states of the electrodes. Additionally, structural defects at the interface also have a significant influence on TMR. In this study, we employ B2-Fe3Sn as the magnetic electrode of MTJs. The use of Fe3Sn could solve the problem of lattice mismatch between Fe and MgO. However, the presence of dissimilar atoms in the electrodes or interface oxidation could be a source of defects at the interface. We find that MTJs with Fe3Sn exhibit a TMR of 50% and an asymmetric bias dependence.